Vacuum thin layers deposition
Vacuum system VS1200 was initially designed for PVD (Physical Vapor Deposition) deposition of large substrates or set of small samples fixed in rotating calotte. It allows deposition of thin layers including multiple layers of different materials (sandwiches). Adhesion is improved bymeans of high output ion source. Ion Assisted Deposition is used in case of oxides deposition to achieve high-quality layers.
- Reflective layers for UV, VIS and near infra wavelength range
- Protective layers of SiO2, HfO2, TiO2, and Ta2O5
- Beam splitters, band filters
- Solid substrates - glass, plastics, metal pieces
- Maximum dimension of substrate up to 1000 mm OD
- Deposited layers: Al, Cr, SiO2, MgF2, ZnS, TiO2, HfO2, Ta2O5
Modes, conditions and precision
- Technical vacuum up to 5.10-5 Pa
- Means of deposition: thermal vaporization, electron gun
- Reactive deposition in O2 atmosphere (optional)
- Ion Assisted Deposition (IAD)
- Surface activation: Argon discharge, low-energy ion pre-cleaning
Plasma thin layer deposition
Hybrid plasma HIPP deposition system allows the preparation of dielectric optical layers, thin films on polymer films as well as deposition of functional structures on substrates with conductive electrode.
The hybrid HIPP (Highly Ionized Pulse Plasma) deposition system based on a combination of modified pulse-dcmagnetrons with a high degree of ionization and the hollow cathode plasma jets with flowing working gas hasbeen constructed. The hybrid deposition system operates in a dual HIPIMS (High Power Impulse MagnetronSputtering) + MF (mid -frequency) pulse-dc mode of deposition plasma excitation as well. MF pulse-dcaddition to the HIPIMS pulses significantly improves the quality and adhesion parameters of the depositedoptical structures. Further laboratory implemented original plasma apparatus allows the preparation ofnanostructured functional systems arising from the deposition of nanoclusters with controlled sizedistribution. The plasma characterization of depositionsystem is based on a specially modified mass spectrometry offormed clusters. Plasma deposition apparatus is equippedwith a substrate holder with the possibility of connecting thebipolar MF pulse-dc bias. This configuration is intendedparticularly for the preparation of dielectric optical thin films.The deposition system is very suitable for the preparation ofthin films on a polymer substrates (e.g. deposition of the PZT layers on kapton foil with Cu electrode) and the deposition offunctional structures on substrates with conductive electrode(metal, ITO, etc.) The hybrid HIPP deposition system isequipped with instruments for characterization of plasmadeposition parameters using a range of time-resolveddiagnostic techniques. It includes a time-resolved Langmuirprobe, retarding field energy analyzer (RFEA) for ion velocitydistribution function measurement (IVDF) and time-resolvedemission spectroscopy.Realized hybrid plasma system is designed primarily for thepreparation of functional structures of doped oxides of TiO2,WO3, Fe2O3, Y2O3, Sc2O3, (BaxSr1-x)TiO3, ZrO2, HfO2, Bi2O3, NiO,ZnO, etc., including deposition of selected structures ofnanoclusters with controlled size distribution.